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Power Electronics TCAD Device Design Scientist / Senior Scientist, SiC, IME
Job post no longer accepts applications
A*star Research Entities
a month ago
Posted date
a month ago
N/A
Minimum level
N/A
Roles and Responsibilities:
  • TCAD modeling, simulation, and innovative design of high power electronics devices, as well as device characterization.
  • Develop and simulate high power SiC MOSFETs (planar, trench, Super-Junction MOSFET, IGBT) with a blocking voltage exceeding 1.2K using the industry-standard Synopsys/Silvaco simulator.
  • Create and simulate practical & efficient junction terminations.
  • Model transport and carrier scattering in devices operating under extreme ambient conditions.
  • Serve as a valuable resource for colleagues with lesser TCAD power electronics experience and take lead in group projects with managing risks & resource requirements.
  • Foster close collaborations with both internal and external customers to fully understand customer issues and requirements.

Job Requirements:
  • PhD Degree in Electrical Engineering or related field.
  • >2-3 years industrial experience for high power devices design and modeling.
  • Thorough understanding of different types of high-voltage, high-power MOSFETs including Planar, Trench, Super-Junction MOSFETs, and IGBTs, with a focus on design and device characterizations.
  • Hands-on skill in designing MOSFET/diode layouts.
  • Excellent communication skills to effectively engage with customers, address their needs, resolve issues, and meet demands.
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JOB SUMMARY
Power Electronics TCAD Device Design Scientist / Senior Scientist, SiC, IME
A*star Research Entities
Singapore
a month ago
N/A
Contract / Freelance / Self-employed