The Energy Research Institute @ NTU (ERI@N) invites applications for the position of Research Fellow.

Key Responsibilities:

• To conduct research on the development of GaN-based materials growth and device processing.
• Develop regrowth fabrication process using highly doped GaN structure to reduce the Ohmic contact resistance, preferably having worked in clean room process environment
• Support in the growth of GaN epistructures using MBE/MOCVD growth process technology.
• Electrical, structural, surface and optical characterization of III-Nitride semiconductor epiwafers
• Thorough analysis of the results and publish in high impact factor scientific journals.
• Independent handling of the project to meet the deliverables timely.
• Writing project proposal and technical reports to the funding agencies.
• Support PhD students and junior research staff in their research projects.

Job Requirements:

• PhD in Physics, Materials Science, Electrical and Electronic Engineering or related field
• Hands-on experience with III-Nitride semiconductor heterostructure growth and characterization, and preferably device processing in cleanroom and characterization tools.
• Self-driven and motivated person who is a good team player.
• Ability to adapt to changing priorities
• Fluent in English and competent in technical writing skills.

We regret that only shortlisted candidates will be notified.

Hiring Institution: NTU