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Research Associate (Transistor Modeling)
10 days ago
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10 days ago
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The School of Electrical & Electronic Engineering (EEE) invites applications for the position of Research Associate (Transistor Modeling).

Key Responsibilities:
  • Work on a project to develop a compact model for transistor high-frequency operations that is scalable over geometry, dc bias, and doping concentrations
  • Work on extending a GaN-HEMT compact model (using Verilog-A) for RF modeling using physics-based sub-circuit
  • Generate numerical dc IV and S-parameter data for the GaN-HEMT for model validation
  • Extract model parameters using numerical data and devise a general procedure for parameter extraction
  • Run compact model in circuit simulation and compare with numerical data
  • Study and verify model scalability in gate/access-region lengths, dc biases, substrate doping concentrations
  • Extend the model and modeling approach to generic Si-MOSFETs
  • Formulate and implement the sub-surface compact model for a GaN-HEMT using Verilog-A in sub-circuit RF modeling
  • Run dc/ac and frequency analyses of the developed sub-circuit RF model using SPICE in Cadence tools
  • Construct the corresponding GaN-HEMT device in Silvaco tools and obtain numerical data (dc-IV and S-parameters) of various geometries, biases, and doping concentrations
  • Devise parameter extraction strategies for the developed compact model
  • Compare and validate the compact model with numerical data for scalable RF model

Job Requirements:
  • Master's in Electrical and Electronic Engineering or microelectronics related field
  • 1-year research experience in related area
  • In microelectronics with 3+year experience in related area
  • Expertise in transistor compact modeling as well as numerical and circuit simulations
  • Knowledge in transistor (HEMT/MOSFET) device physics and dc/high-frequency operations
  • Experiences in numerical (TCAD) and circuit (SPICE) simulation tools
  • Publication track record is an advantage
  • Proficiency in basics of programming languages such as Verilog-A, Matlab
  • Proficiency in English
  • Good knowledge in transistor physics and dc/RF operations
  • Working knowledge in Verilog-A language and transistor modeling
  • Working knowledge in numerical (TCAD) simulations
  • Working knowledge in circuit (SPICE) simulations
  • Familiarization with commercial CAD tools such as Cadence Spectre and Silvaco TCAD

We regret that only shortlisted candidates will be notified.

Hiring Institution: NTU
Related tags
Research Associate (Transistor Modeling)
10 days ago