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Job Description

The Electrical and Computer Engineering (ECE) Department at the National University of Singapore (NUS) is seeking qualified applicants for the position of Research Fellow to join our team for a project focused on semiconductor oxide-based CMOS devices. The candidate will contribute to the design, fabrication, and characterization of novel oxide-based transistors and circuits for next-generation CMOS technology.

Responsibilities:
• Conduct research on oxide-based semiconductors for BEOL compatible CMOS device applications.
• Design, fabricate, and optimize CMOS transistors using oxide semiconductor materials.
• Work with cleanroom processing tools such as deposition, etching, and lithography systems.
• Characterize oxide materials and devices using techniques such as [SEM, XRD, AFM, parameter analyser etc.]
• Perform electrical characterization and failure analysis of fabricated devices.
• Collaborate within the research team to achieve seamless device integration and synchronized data collection.
• Collaborate with interdisciplinary teams of scientists, engineers and circuit designers within the group and with external partners.
• Publish research findings in peer-reviewed journals and present at conferences.
• Stay updated with emerging trends in semiconductor materials and CMOS technology.
• Supporting and guiding the experiments of FYP students and MSc students

We offer competitive compensation based on qualifications and experience, along with access to state-of-the-art facilities within a stimulating research environment. This is a full-time position initially offered on a 12-month contract, subject to renewal based on performance evaluation and funding availability.

Interested applicants may send their motivation letter and CV via the NUS Career Portal.

Qualifications

Candidate should meet at least 4 criteria from the following list:

• PhD in relevant fields including Electrical Engineering, Materials Science, Physics.
• Strong background in semiconductor device physics and CMOS technology, demonstrated through publications, patents, or prior projects.
• Hands-on experience in device fabrication using oxide semiconductor materials (e.g., IGZO, ZnO, SnO etc).
• Proficiency in device fabrication processes (photolithography, deposition, etching, etc.).
• Experience in electrical characterization techniques (I-V, C-V, reliability testing) and data analysis.
• Knowledge of integration challenges in CMOS processing
• Strong analytical and problem-solving skills.
• Excellent written and verbal communication skills.
• Ability to work independently as well as part of a multidisciplinary team.