Lead the development of deep sub-micron generation production-worthy and cost-effective processes.

• Take ownership of both process development and related tool issues for specific films/processes.
• Integrate new processes into corresponding process flows for application in high-density advanced memory parts, primarily Advanced NAND applications.
• Collaborate with diverse teams across R&D, integration, pilot line, and high-volume production to achieve timely task completion.
• Plan and implement experiments and write concise reports detailing the results.
• Develop innovative chemistries and hardware for process innovation.
• Define process and equipment strategies for next-generation NAND.
• Design and execute experiments to enhance NAND Cell performance.
• Identify and understand failure mechanisms of Cell materials and correlate them with NAND Cell electrical behaviors.
• Deliver innovative solutions for next-generation Advanced NAND Cell technology.

Other Responsibilities

• Suggest process alternatives and evaluate options to improve film properties and process margins.
• Drive collaboration with integration, device, and manufacturing teams to address NAND Cell technology gaps.
• Solve complex problems related to process and material development.
• Lead cost-saving initiatives through efficient process and material utilization.
• Correlate process parameters with device cell metrics to optimize performance.

Required Expertise

• Experience in thin film processing (ALD, CVD) and characterization methods.
• Knowledge of chemical kinetics, thermal dynamics, plasma physics and chemistry, vacuum physics, and their direct application to thin film deposition processes.
• Understanding of electronic material properties resulting from various types of deposited thin films.
• Fundamental characterization of Cell materials and development of new methodologies to project NAND Cell reliability.
• Familiarity with interactions between process/hardware and device performance.
• Knowledge of fundamental challenges in material exploration for device scaling.
• Proficiency in various thin film electrical evaluation methods and techniques such as leakage, impedance, and capacitance.
• Experience and knowledge of Fab metrology tools such as optical/electrical methods.
• Understanding of device physics, including basic MOCAP, MOSFET, and 3D NAND operation.
• Knowledge of 3D NAND structure and interaction between film processes and structural effects.
• Awareness of overall 3D NAND trends and history.

Minimum Qualifications

• PhD or equivalent experience in Materials Science and Engineering, Chemical Engineering, Physics, Chemistry, Electrical Engineering, or a related field.
• At least 3 years of demonstrated experience in thin films research and development, preferably with experience in deposition for microelectronic devices.