The School of Materials Science & Engineering (MSE) invites applications for the position of Research Fellow.

The Research Fellow is expected to play a lead role in the reliability testing and failure analysis of GaN High Electron Mobility Transistors (HEMT) integrated on silicon CMOS devices. He/she will be involved in carrying out accelerated testing of multiple devices fabricated under different conditions using package/wafer level testing. Failure analysis on the devices will also be carried out using SEM/EDX, TEM, etc. The job will also involve working with researchers from the fabrication and application teams, from School of EEE, NTU and Singapore-MIT Alliance for Research and Technology (SMART).

Key Responsibilities:

• Carry out reliability study on the CMOS + GaN HEMT ICs fabricated by the other research teams in the programme
• Carry out failure analysis on the CMOS + GaN HEMT ICs fabricated by the other research teams in the programme
• Work closely with the research team in LEES in support of the overall programme goals
• Any other duties as assigned by the PI

Job Requirements

• Ph.D. degree in the relevant engineering disciplines (e.g., Electrical/Electronic Engineering, Materials Engineering)
• Experience in device characterization and testing
• Knowledge in reliability studies such as accelerated testing, failure analysis will be an advantage
• Good in written & oral English
• Good working attitude and team player
• Relevant experience in lieu of PhD degree may be considered

We regret that only shortlisted candidates will be notified.

Hiring Institution: NTU