We're seeking a talented and passionate Lead Process Engineer to join our epitaxy team. You'll play a crucial role in developing cutting-edge platform technologies for RF - GaN HEMT devices on SiC, pushing the boundaries of performance and efficiency.

Job Responsibilities:

• Develop and innovative GaN on SiC HEMT epitaxial processes on an MOCVD system, focusing on recipe development achieving high carrier mobility, low threading dislocation density, on 6/8-inch substrates.
• Design of experiments to minimize line defects, point defects and extended defects density, with emphasis on enhancing GaN HEMT device performance.
• Selective GaN regrowth for contact formation.
• Metrology and characterization of GaN/AlGaN epilayers (e.g. carrier mobility, threading dislocation density, FWHM rocking curve, thickness uniformity, surface roughness, crystal quality, stress, carrier mobility, etc.).
• Preparation of technical presentations and papers for internal meetings, as well as conferences and journals.
• Working with NSTIC-GaN and related team to solve key technical challenges in the GaN RF electronics industry.
• Publishing technical papers and drafting technical disclosures / IP.
• Contributing ideas towards new funding proposals.
• All other reasonable duties, as assigned.

Job Requirements:

• Master's degree in electrical/Electronic Engineering, Materials Science, Physics, or a related field for Lead Process Engineer position.
• Above 8 - 10 years of proven experience in compound semiconductor epitaxy process development/manufacturing (GaN or III-V preferred).
• Knowledge of semiconductor processes (lithography, etch, etc.) and characterization techniques (SEM, TEM, XRD, etc.) is a plus.
• Excellent communication, collaboration, and self-motivation skills.
• Avid technical reader, critical thinker, and team player.
• Proficiency in data analysis and DOE tools (Excel, JMP, Origin, etc.) is beneficial.