The Senior Research Fellow (RF) will work on a research project to conduct research on the development of compound semiconductor growth and device processing in Energy Research Institute @ NTU (ERI@N).

Key Responsibilities:

• Develop regrowth fabrication process using highly doped GaN structure to reduce the Ohmic contact resistance, preferably having worked in clean room process environment
• Support in the growth of GaN epistructures using MBE growth process technology
• Electrical, structural, surface and optical characterization of III-Nitride semiconductor epiwafers
• Thorough analysis of the results and publish in high impact factor scientific journals
• Independent handling of the project to meet the deliverables timely
• Writing project proposal and technical reports to the funding agencies
• Support PhD students and junior research staff in their research projects

Job Responsibilities:

• PhD in Physics, Materials Science, Electrical and Electronic Engineering or related field
• Hands-on experience with III-Nitride semiconductor heterostructure growth and characterization, and preferably device processing in cleanroom and characterization tools
• Self-driven and motivated person who is a good team player
• Ability to adapt to changing priorities
• Fluent in English and competent in technical writing skills

We regret that only shortlisted candidates will be notified.

Hiring Institution: NTU